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Correct me please, but this is how I understood it.
They are basically instead of leading the current on one flat surface they make a small wall on which they can lead the current on both of the sides and the top.
A transistor has an on and off stage, one where the current goes through it and one where it doesn't. With more area for the current to pass through less voltage is needed to register a difference between the on and off stage. In addition, the decreased resistance means less power will be loosed as heat.
I'd be curious how much of a performance gain would be attained going from 32 to 22 nm process while keeping 2d traces.
Either way, hoping this doesnt cream AMD's Bulldozer, I was hoping for the two to be in good competition again for all of the prices wars that benefit us the end user.
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